Invention Grant
US07671411B2 Lateral double-diffused MOSFET transistor with a lightly doped source
有权
具有轻掺杂源的横向双扩散MOSFET晶体管
- Patent Title: Lateral double-diffused MOSFET transistor with a lightly doped source
- Patent Title (中): 具有轻掺杂源的横向双扩散MOSFET晶体管
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Application No.: US11681690Application Date: 2007-03-02
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Publication No.: US07671411B2Publication Date: 2010-03-02
- Inventor: Budong You , Marco A. Zuniga
- Applicant: Budong You , Marco A. Zuniga
- Applicant Address: US CA Fremont
- Assignee: Volterra Semiconductor Corporation
- Current Assignee: Volterra Semiconductor Corporation
- Current Assignee Address: US CA Fremont
- Agency: Fish & Richardson P.C.
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described.
Public/Granted literature
- US20070207600A1 Lateral Double-Diffused Mosfet (LDMOS) Transistor and a Method of Fabricating the Same Public/Granted day:2007-09-06
Information query
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