A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels.