Invention Grant
- Patent Title: Integrated circuit fuse structures including spatter shields within opening of an insulating layer and spaced apart from a sidewall of the opening
- Patent Title (中): 集成电路保险丝结构，包括在绝缘层的开口内并与开口的侧壁间隔开的飞溅屏蔽
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Application No.: US11682076Application Date: 2007-03-05
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Publication No.: US07671443B2Publication Date: 2010-03-02
- Inventor: Won-Chul Lee
- Applicant: Won-Chul Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2006-0054309 20060616
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/72
Abstract:
At least one fuse pattern extending in a first direction is formed on a fuse region of a substrate. A preliminary first insulating pattern is formed on the fuse region to cover the fuse pattern. A conductive layer is formed on the preliminary first insulating pattern. The conductive layer and the preliminary first insulating pattern are etched to form at least one fence extending in a second direction substantially perpendicular to the first direction. Related fuse structures are also disclosed.
Public/Granted literature
- US20070290295A1 INTEGRATED CIRCUIT FUSE STRUCTURES INCLUDING SPATTER SHIELDS AND METHODS OF FORMING THE SAME Public/Granted day:2007-12-20
Information query
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