Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US10946470Application Date: 2004-09-22
-
Publication No.: US07671453B2Publication Date: 2010-03-02
- Inventor: Kenichi Hayashi , Hisashi Kawafuji , Tatsuyuki Takeshita , Nobuhito Funakoshi , Hiroyuki Ozaki , Kazuhiro Tada
- Applicant: Kenichi Hayashi , Hisashi Kawafuji , Tatsuyuki Takeshita , Nobuhito Funakoshi , Hiroyuki Ozaki , Kazuhiro Tada
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2003-339730 20030930
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/28 ; H01L23/29
Abstract:
A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.
Public/Granted literature
- US20050067719A1 Semiconductor device and method for producing the same Public/Granted day:2005-03-31
Information query
IPC分类:
