Invention Grant
- Patent Title: High frequency multilayer bandpass filter
- Patent Title (中): 高频多层带通滤波器
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Application No.: US11697025Application Date: 2007-04-05
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Publication No.: US07671706B2Publication Date: 2010-03-02
- Inventor: Tetsuo Taniguchi
- Applicant: Tetsuo Taniguchi
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd
- Current Assignee: Murata Manufacturing Co., Ltd
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2006-112263 20060414; JP2006-197214 20060719
- Main IPC: H01P1/20
- IPC: H01P1/20

Abstract:
In a multilayer bandpass filter, capacitances are produced between a ground electrode provided in a ground electrode formation layer and capacitor electrodes provided in a capacitor electrode formation layer. A plurality of inductor electrodes are defined by via-electrodes and line electrodes such that loop planes of inductor electrodes at least partially overlap each other when seen in a direction in which the inductor electrodes are arranged. The direction of the loop of the inductor electrode of the LC parallel resonator located (at a first stage) at an input end is set to be opposite to the direction of the loop of the inductor electrodes of the LC parallel resonator (at a second stage) adjacent to the inductor electrode of the LC parallel resonator located at the input end. Similarly, the direction of the loop of the inductor electrode of the LC parallel resonator located (at a fifth stage) at an output end is set to be opposite to the direction of the loop of the inductor electrodes of the LC parallel resonator (at a fourth stage) adjacent to the inductor electrode of the LC parallel resonator located at the output end.
Public/Granted literature
- US20070241839A1 HIGH FREQUENCY MULTILAYER BANDPASS FILTER Public/Granted day:2007-10-18
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