Invention Grant
US07671914B2 Increasing readout speed in CMOS APS sensors through block readout
失效
通过块读出增加CMOS APS传感器的读出速度
- Patent Title: Increasing readout speed in CMOS APS sensors through block readout
- Patent Title (中): 通过块读出增加CMOS APS传感器的读出速度
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Application No.: US10983083Application Date: 2004-11-08
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Publication No.: US07671914B2Publication Date: 2010-03-02
- Inventor: Lin-Ping Ang
- Applicant: Lin-Ping Ang
- Applicant Address: US ID Boise
- Assignee: Micron Technology Inc.
- Current Assignee: Micron Technology Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.
Public/Granted literature
- US20050151058A1 Increasing readout speed in CMOS APS sensors through block readout Public/Granted day:2005-07-14
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