Invention Grant
- Patent Title: Semiconductor wafer flatness correction apparatus and method
- Patent Title (中): 半导体晶片平坦度校正装置及方法
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Application No.: US11707046Application Date: 2007-02-16
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Publication No.: US07671969B2Publication Date: 2010-03-02
- Inventor: Jang-Hyun Yun
- Applicant: Jang-Hyun Yun
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0016465 20060220
- Main IPC: G03B27/58
- IPC: G03B27/58 ; G03B27/60 ; G03B27/62
Abstract:
There are provided a wafer stage, an exposure apparatus having the same, and a wafer flatness correction method using the same. The wafer stage includes a chuck having first and second vacuum holes, a first vacuum pump applying a vacuum suction force to the first vacuum holes and a second vacuum pump applying a vacuum suction force to the second vacuum holes. Further, the exposure apparatus and the wafer flatness correction method using the same are disclosed.
Public/Granted literature
- US20070195306A1 Semiconductor wafer flatness correction apparatus and method Public/Granted day:2007-08-23
Information query
