Invention Grant
US07672103B2 Circuit having low operating voltage for protecting semiconductor device from electrostatic discharge
失效
具有低工作电压的电路,用于保护半导体器件免受静电放电
- Patent Title: Circuit having low operating voltage for protecting semiconductor device from electrostatic discharge
- Patent Title (中): 具有低工作电压的电路,用于保护半导体器件免受静电放电
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Application No.: US12048406Application Date: 2008-03-14
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Publication No.: US07672103B2Publication Date: 2010-03-02
- Inventor: Jung Eon Moon
- Applicant: Jung Eon Moon
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0025187 20070314
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H3/20 ; H02H9/04 ; H02H3/22 ; H02H1/00 ; H02H1/04 ; H02H9/06 ; H01C7/12

Abstract:
A circuit for protecting a semiconductor device from electrostatic discharge by protecting an internal circuit from electrostatic current flowing into an input/output pad includes a first discharge unit that discharges the electrostatic current to a first power supply line or a second power supply line. A second discharge unit protects the internal circuit from electrostaticity flowing from the input/output pad or the second power supply line. A power clamp unit discharges the electrostatic current, which is discharged to the first power supply line or the second power supply line by the first discharge unit, to the opposite power supply line. A trigger unit drives the first discharge unit and the power clamp unit with first and second detection voltages generated in response to a voltage drop of the discharged electrostatic current.
Public/Granted literature
- US20090201616A1 CIRCUIT HAVING LOW OPERATING VOLTAGE FOR PROTECTING SEMICONDUCTOR DEVICE FROM ELECTROSTATIC DISCHARGE Public/Granted day:2009-08-13
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