Invention Grant
- Patent Title: Semiconductor memory device and method of programming the same
- Patent Title (中): 半导体存储器件及其编程方法
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Application No.: US12073678Application Date: 2008-03-07
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Publication No.: US07672154B2Publication Date: 2010-03-02
- Inventor: In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
- Applicant: In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0113875 20071108
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
Public/Granted literature
- US20090122596A1 Semconductor memory device and method of programming the same Public/Granted day:2009-05-14
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