Provided are methods for programming in a non-volatile memory device, using incremental step pulses as a program voltage that is applied to a selected wordline. Methods may include applying a precharge voltage to an even bitline and an odd bitline such that the even bitline and the odd bitline are alternately charged with the precharge voltage and a boosted voltage that is higher than the precharge voltage. Methods may further include applying a bitline voltage corresponding to program data to a selected bitline of the even bitline and the odd bitline.