Invention Grant
- Patent Title: Flash memory device and program method thereof
- Patent Title (中): 闪存装置及其编程方法
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Application No.: US11769429Application Date: 2007-06-27
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Publication No.: US07672170B2Publication Date: 2010-03-02
- Inventor: Byeong-Hoon Lee , Sun-Kwon Kim
- Applicant: Byeong-Hoon Lee , Sun-Kwon Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0008024 20070125
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method for programming a flash memory device with a plurality of memory cells. A selected memory cell is programmed under a condition where a bulk area is biased with a high voltage. A program pass/fail of the memory cell is verified with the high voltage applied to the bulk area.
Public/Granted literature
- US20080183951A1 Flash Memory Device and Program Method Thereof Public/Granted day:2008-07-31
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