Invention Grant
- Patent Title: Equalizing circuit for semiconductor memory device
- Patent Title (中): 半导体存储器件的均衡电路
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Application No.: US11528514Application Date: 2006-09-28
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Publication No.: US07672174B2Publication Date: 2010-03-02
- Inventor: Kang-Seol Lee
- Applicant: Kang-Seol Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2005-0091591 20050929; KR10-2006-0038716 20060428
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A semiconductor memory device includes an equalizing signal generation circuit comprising a clamping circuit that clamps a voltage level less than the voltage level of a high voltage level by being controlled by the high voltage, and an equalizing signal driver receiving an output signal of the equalizing signal generation circuit as a driving signal.
Public/Granted literature
- US20070070747A1 Semiconductor memory device Public/Granted day:2007-03-29
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