Invention Grant
- Patent Title: Semiconductor memory device with two-stage input buffer
- Patent Title (中): 具有两级输入缓冲器的半导体存储器件
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Application No.: US12000230Application Date: 2007-12-11
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Publication No.: US07672183B2Publication Date: 2010-03-02
- Inventor: Yong-Suk Joo , Byoung-Jin Choi
- Applicant: Yong-Suk Joo , Byoung-Jin Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2007-0033547 20070405
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A semiconductor memory device includes: a pre-amplifying unit configured to amplify a difference between an input signal and a reference signal to output a pre-output signal; a delaying unit configured to delay the input signal to output a delayed input signal; and a main amplifying unit configured to receive the pre-output signal and the delayed input signal as differential inputs to output an output signal.
Public/Granted literature
- US20080247250A1 Semiconductor memory device with two-stage input buffer Public/Granted day:2008-10-09
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