Invention Grant
US07672184B2 Semiconductor memory device with refresh signal generator and its driving method
有权
具有刷新信号发生器的半导体存储器件及其驱动方法
- Patent Title: Semiconductor memory device with refresh signal generator and its driving method
- Patent Title (中): 具有刷新信号发生器的半导体存储器件及其驱动方法
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Application No.: US11824429Application Date: 2007-06-29
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Publication No.: US07672184B2Publication Date: 2010-03-02
- Inventor: Jae-Hyuk Im , Chang-Ho Do
- Applicant: Jae-Hyuk Im , Chang-Ho Do
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2007-0000391 20070103
- Main IPC: G11C11/406
- IPC: G11C11/406
Abstract:
A semiconductor memory device includes a level feedback circuit and a refresh signal generator. The level feedback circuit outputs a bulk voltage applied to a cell transistor as a feedback signal. The refresh signal generator generates an internal refresh signal for driving a refresh operation at predetermined intervals during a self refresh mode. A period of the internal refresh signal is adjusted according to a voltage level of the feedback signal.
Public/Granted literature
- US20080159039A1 Semiconductor memory device with refresh signal generator and its driving method Public/Granted day:2008-07-03
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