Invention Grant
- Patent Title: Semiconductor laser and method of manufacture
- Patent Title (中): 半导体激光器及其制造方法
-
Application No.: US11328517Application Date: 2006-01-09
-
Publication No.: US07672348B2Publication Date: 2010-03-02
- Inventor: John A. Patchell , Brian J. Kelly , James C. O'Gorman
- Applicant: John A. Patchell , Brian J. Kelly , James C. O'Gorman
- Applicant Address: IE Dublin
- Assignee: Eblana Photonics Limited
- Current Assignee: Eblana Photonics Limited
- Current Assignee Address: IE Dublin
- Agency: Brooks, Cameron & Huebsch PLLC
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optical feedback means formed by a plurality of refractive index perturbations (16, 22) in the laser cavity, each perturbation defining two interfaces (20, 21); characterized in that, for at least one perturbation, only one of the two interfaces contributes to optical feedback along the optical path. The present invention relaxes the lithographic tolerances for making single longitudinal mode devices and improves performance characteristics.
Public/Granted literature
- US20070211775A1 Semiconductor laser and method of manufacture Public/Granted day:2007-09-13
Information query