Invention Grant
- Patent Title: Laser diode
- Patent Title (中): 激光二极管
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Application No.: US11462726Application Date: 2006-08-07
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Publication No.: US07672349B2Publication Date: 2010-03-02
- Inventor: Keiji Sato , Ryuichiro Hayashi , Kenji Oikawa , Takeharu Asano
- Applicant: Keiji Sato , Ryuichiro Hayashi , Kenji Oikawa , Takeharu Asano
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JPP2005-229321 20050808
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the second light emitting device are layered in this order on the support base in a manner that the respective laser structures of the first light emitting device and the second light emitting device are opposed to each other. A substrate side of the first light emitting device and a laser structure side of the second light emitting device are electrically connected to the support base.
Public/Granted literature
- US20070030872A1 LASER DIODE Public/Granted day:2007-02-08
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