Invention Grant
- Patent Title: Light emitting diode structures
- Patent Title (中): 发光二极管结构
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Application No.: US12344935Application Date: 2008-12-29
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Publication No.: US07672548B2Publication Date: 2010-03-02
- Inventor: Majd Zoorob , John Lincoln
- Applicant: Majd Zoorob , John Lincoln
- Applicant Address: TW Chunan Miaoli County
- Assignee: Luxtaltek Corporation
- Current Assignee: Luxtaltek Corporation
- Current Assignee Address: TW Chunan Miaoli County
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: G02B6/12
- IPC: G02B6/12

Abstract:
Light emitting diode (LED) structures are described that include a first layer and a light-generating layer, wherein light generated in the light-generating layer generally emerges from the LED structure through the upper surface of the first layer. The coupling out of light generated by spontaneous emission is enhanced by the presence of patterning in the first layer, which may take the form of an embedded photonic quasicrystal, a photonic structure comprising an amorphous array of subregions, or a zone plate structure. The invention provides the benefit of improved light extraction from the LED without undesirable far field illumination patterns.
Public/Granted literature
- US20090101931A1 Light Emitting Diode Structures Public/Granted day:2009-04-23
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