Invention Grant
- Patent Title: Enhanced process yield using a hot-spot library
- Patent Title (中): 使用热点库提高过程产量
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Application No.: US11947234Application Date: 2007-11-29
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Publication No.: US07673278B2Publication Date: 2010-03-02
- Inventor: Benjamen M. Rathsack , Kathleen Nafus , Steven Scheer
- Applicant: Benjamen M. Rathsack , Kathleen Nafus , Steven Scheer
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
The invention provides apparatus and methods for processing substrates using a hot-spot library.
Public/Granted literature
- US20090144691A1 Enhanced Process Yield Using a Hot-Spot Library Public/Granted day:2009-06-04
Information query
