Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US10929439Application Date: 2004-08-31
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Publication No.: US07674351B2Publication Date: 2010-03-09
- Inventor: Akitaka Makino , Hideki Kihara , Susumu Tauchi
- Applicant: Akitaka Makino , Hideki Kihara , Susumu Tauchi
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-064638 20040308
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306

Abstract:
A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
Public/Granted literature
- US20050193953A1 Plasma processing apparatus Public/Granted day:2005-09-08
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