Invention Grant
US07674446B2 Hafnium silicide target for forming gate oxide film, and method for preparation thereof
有权
用于形成栅极氧化膜的铪硅化物靶及其制备方法
- Patent Title: Hafnium silicide target for forming gate oxide film, and method for preparation thereof
- Patent Title (中): 用于形成栅极氧化膜的铪硅化物靶及其制备方法
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Application No.: US12396716Application Date: 2009-03-03
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Publication No.: US07674446B2Publication Date: 2010-03-09
- Inventor: Shuichi Irumata , Ryo Suzuki
- Applicant: Shuichi Irumata , Ryo Suzuki
- Applicant Address: JP Tokyo
- Assignee: Nippon Mining & Metals Co., Ltd
- Current Assignee: Nippon Mining & Metals Co., Ltd
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2001-217586 20010718; JP2002-105905 20020409
- Main IPC: C01B21/68
- IPC: C01B21/68
Abstract:
A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.
Public/Granted literature
- US20090194898A1 Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof Public/Granted day:2009-08-06
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