Invention Grant
- Patent Title: Materials containing voids with void size controlled on the nanometer scale
- Patent Title (中): 含有空隙尺寸在纳米级上的空隙的材料
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Application No.: US11190360Application Date: 2005-07-27
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Publication No.: US07674521B2Publication Date: 2010-03-09
- Inventor: Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- Applicant: Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: B32B3/26
- IPC: B32B3/26

Abstract:
The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.
Public/Granted literature
- US20070196639A1 Materials containing voids with void size controlled on the nanometer scale Public/Granted day:2007-08-23
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