Invention Grant
US07674641B2 Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots
失效
制造具有硅量子点的白发光倒装芯片二极管的方法
- Patent Title: Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots
- Patent Title (中): 制造具有硅量子点的白发光倒装芯片二极管的方法
-
Application No.: US11402031Application Date: 2006-04-12
-
Publication No.: US07674641B2Publication Date: 2010-03-09
- Inventor: Tsun-Neng Yang
- Applicant: Tsun-Neng Yang
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council
- Current Assignee: Atomic Energy Council
- Current Assignee Address: TW Taoyuan
- Agency: Jackson IPG PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention is to fabricate a flip-chip diode which emits a white light. The diode has a film embedded with silicon quantum dots. And the white light is formed by mixing colorful lights through the film.
Public/Granted literature
- US20070243660A1 Method for fabricating white-light-emitting flip-chip diode having silicon quantum dots Public/Granted day:2007-10-18
Information query
IPC分类:
