Invention Grant
US07674642B2 Method of fabricating linear cascade high-speed green light emitting diode
有权
制造线性级联高速绿色发光二极管的方法
- Patent Title: Method of fabricating linear cascade high-speed green light emitting diode
- Patent Title (中): 制造线性级联高速绿色发光二极管的方法
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Application No.: US11984335Application Date: 2007-11-16
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Publication No.: US07674642B2Publication Date: 2010-03-09
- Inventor: Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
- Applicant: Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
- Applicant Address: TW Jhongli, Taoyuan
- Assignee: National Central University
- Current Assignee: National Central University
- Current Assignee Address: TW Jhongli, Taoyuan
- Agency: Jackson IPG PLLC
- Priority: TW96115765A 20070503
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.
Public/Granted literature
- US20080274573A1 Method of fabricating linear cascade high-speed green light emitting diode Public/Granted day:2008-11-06
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