Invention Grant
- Patent Title: Method for fabrication of group III nitride semiconductor
- Patent Title (中): III族氮化物半导体的制造方法
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Application No.: US11662474Application Date: 2005-09-12
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Publication No.: US07674644B2Publication Date: 2010-03-09
- Inventor: Masato Kobayakawa , Hisayuki Miki
- Applicant: Masato Kobayakawa , Hisayuki Miki
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-265333 20040913
- International Application: PCT/JP2005/017199 WO 20050912
- International Announcement: WO2006/030918 WO 20060323
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
Public/Granted literature
- US20080076200A1 Method for Fabrication Group III Nitride Semiconductor Public/Granted day:2008-03-27
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