Invention Grant
- Patent Title: Semiconductor assemblies and methods of manufacturing such assemblies including forming trenches in a first side of the molding material
- Patent Title (中): 半导体组件和制造这种组件的方法，包括在模制材料的第一侧中形成沟槽
-
Application No.: US11933754Application Date: 2007-11-01
-
Publication No.: US07674655B2Publication Date: 2010-03-09
- Inventor: Swee Kwang Chua , Suan Jeung Boon , Yong Poo Chia
- Applicant: Swee Kwang Chua , Suan Jeung Boon , Yong Poo Chia
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Priority: SG200706296 20070828
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/22
Abstract:
Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches to an intermediate depth in a molded portion of a molded wafer having a plurality of dies arranged in rows and columns. The method also includes removing material from a second side of the molded portion at areas aligned with the first side trenches, wherein removing the material forms openings through the molded portion. The method further includes forming a plurality of electrical contacts at the second side of the molded portion at the openings and electrically connecting the second side contacts to corresponding bond-sites on the dies.
Public/Granted literature
- US20090057843A1 SEMICONDUCTOR ASSEMBLIES AND METHODS OF MANUFACTURING SUCH ASSEMBLIES Public/Granted day:2009-03-05
Information query
IPC分类:
