Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12025057Application Date: 2008-02-04
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Publication No.: US07674658B2Publication Date: 2010-03-09
- Inventor: Chen-Yueh Li , Yi-Wei Chen , Ming-Yan Chen
- Applicant: Chen-Yueh Li , Yi-Wei Chen , Ming-Yan Chen
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW96117303A 20070515
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/10
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The manufacturing method can form a structure of a thin film transistor (TFT) having a symmetric lightly doped region, and thus provide superior operation reliability and electrical performance. In addition, the manufacturing method forms gate patterns of different TFTs by the same mask process and thereby avoids the misalignment of masks so as to improve the processing yield and reduce the manufacturing cost.
Public/Granted literature
- US20080283923A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-11-20
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