Invention Grant
- Patent Title: Method for fabricating a thin film transistor
- Patent Title (中): 薄膜晶体管的制造方法
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Application No.: US11798476Application Date: 2007-05-14
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Publication No.: US07674659B2Publication Date: 2010-03-09
- Inventor: Hoon Kim
- Applicant: Hoon Kim
- Applicant Address: KR Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR2003-24431 20030417
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to a thin film transistor for preventing short of circuit by step and a method for fabricating the thin film transistor and provides a thin film transistor including a buffer layer formed on glass substrate; an activation layer formed on the buffer layer; and a gate insulation layer formed on the buffer layer including the activation layer, with the buffer layer having a step formed between a lower part of the activation layer and a part except the lower part of the activation layer.
Public/Granted literature
- US20070218602A1 Thin film transistor and method for fabricating the same Public/Granted day:2007-09-20
Information query
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