Invention Grant
US07674662B2 Process for making thin film field effect transistors using zinc oxide
有权
使用氧化锌制造薄膜场效应晶体管的工艺
- Patent Title: Process for making thin film field effect transistors using zinc oxide
- Patent Title (中): 使用氧化锌制造薄膜场效应晶体管的工艺
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Application No.: US11458511Application Date: 2006-07-19
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Publication No.: US07674662B2Publication Date: 2010-03-09
- Inventor: Yan Ye , John M. White , David J. Eaglesham
- Applicant: Yan Ye , John M. White , David J. Eaglesham
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer. Thereafter, the active channel is formed by dry etching the source-drain electrode layer without effectively etching the zinc oxide layer.
Public/Granted literature
- US20080020550A1 PROCESS FOR MAKING THIN FILM FIELD EFFECT TRANSISTORS USING ZINC OXIDE Public/Granted day:2008-01-24
Information query
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