Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate

Invention Grant

US07674680B2 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate 失效

Title translation: 晶体管具有高介电常数栅极绝缘层，源极与漏极形成肖特基接触衬底

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Patent Title: Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
Patent Title (中): 晶体管具有高介电常数栅极绝缘层，源极与漏极形成肖特基接触衬底
Application No.: US10958627

Application Date: 2004-10-05
Publication No.: US07674680B2

Publication Date: 2010-03-09
Inventor: John P. Snyder , John P. Larson
Applicant: John P. Snyder , John P. Larson
Applicant Address: US NC Chapel Hill
Assignee: Avolare 2, LLC
Current Assignee: Avolare 2, LLC
Current Assignee Address: US NC Chapel Hill
Agency: Lemaire Patent Law Firm, P.L.L.C.
Agent David J. King
Main IPC: H01L21/336
IPC: H01L21/336

Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate

Abstract:

The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

Abstract(Chinese):

本发明涉及一种用于通过高介电常数栅极绝缘层和形成具有衬底的肖特基接触或肖特基状区域的源极和/或漏极来调节电流的装置及其制造方法。在一个方面，栅极绝缘层的介电常数大于硅的介电常数。在另一方面，电流调节装置可以是具有任何取向的MOSFET器件，可选地是平面P型或N型MOSFET。在另一方面，源极和/或漏极可部分或全部由硅化物组成。

Public/Granted literature

US20050106821A1 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate Public/Granted day:2005-05-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的