Invention Grant
US07674686B2 Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
失效
使用激光转印的感光基板上的移植磁随机存取存储器（MRAM）器件及其制造方法
- Patent Title: Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
- Patent Title (中): 使用激光转印的感光基板上的移植磁随机存取存储器（MRAM）器件及其制造方法
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Application No.: US11923858Application Date: 2007-10-25
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Publication No.: US07674686B2Publication Date: 2010-03-09
- Inventor: Arunava Gupta
- Applicant: Arunava Gupta
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group PLLC
- Agent Stephen C. Kaufman, Esq.
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/30
Abstract:
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
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