Disclosed are an apparatus and a method for manufacturing a semiconductor device. The apparatus comprises a transfer chamber for transferring a substrate, a first process chamber connected to the transfer chamber configured to form a TiSiN layer on the substrate, a second process chamber connected to the transfer chamber configured to form a tantalum layer on the TiSiN layer, and a third process chamber connected to the transfer chamber configured to form a copper seed layer on the tantalum layer. After forming the TiSiN layer, a portion of the TiSiN layer in contact with the lower metal interconnection is etched, the tantalum layer is formed on the TiSiN layer in contact with the exposed lower metal interconnection, the copper seed layer is formed on the tantalum layer, and then the copper interconnection is formed on the copper seed layer. In this way, the copper interconnection can be efficiently formed.