Invention Grant
- Patent Title: Manufacturable reliable diffusion-barrier
- Patent Title (中): 可制造可靠的扩散屏障
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Application No.: US11968093Application Date: 2007-12-31
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Publication No.: US07674707B2Publication Date: 2010-03-09
- Inventor: Noel M. Russell , Satyavolu Srinivas Papa Rao , Stephan Grunow
- Applicant: Noel M. Russell , Satyavolu Srinivas Papa Rao , Stephan Grunow
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/283
- IPC: H01L21/283

Abstract:
Devices and methods are presented to fabricate diffusion barrier layers on a substrate. Presently, barrier layers comprising a nitride layer and a pure metal layer are formed using a physical vapor deposition (PVD) process that requires multiple ignition steps, and results in nitride-layer thicknesses of no less than 2 nm. This invention discloses devices and process to produce nitride-layers of less than
Public/Granted literature
- US20090166865A1 MANUFACTURABLE RELIABLE DIFFUSION-BARRIER Public/Granted day:2009-07-02
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