Invention Grant
US07674711B2 Method of fabricating flash memory device by forming a drain contact plug within a contact hole below and ILD interface
失效
通过在下面的接触孔内形成漏极接触插塞和ILD接口来制造闪存器件的方法
- Patent Title: Method of fabricating flash memory device by forming a drain contact plug within a contact hole below and ILD interface
- Patent Title (中): 通过在下面的接触孔内形成漏极接触插塞和ILD接口来制造闪存器件的方法
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Application No.: US11951764Application Date: 2007-12-06
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Publication No.: US07674711B2Publication Date: 2010-03-09
- Inventor: Yun Je Choi
- Applicant: Yun Je Choi
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0065041 20070629
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44 ; H01L21/768
Abstract:
The present invention relates to a method of fabricating a flash memory device. The method may include forming a first and a second interlayer insulating film on a semiconductor substrate having a cell region, etching the second and first interlayer insulating films, thus forming a contact hole through which a junction region of the cell region is exposed, forming a contact plug within the contact hole, the contact plug having a height lower than that of an interface of the first and second interlayer insulating films, and forming a spacer on sidewalls of the contact hole over the contact plug.
Public/Granted literature
- US20090004854A1 Method of Fabricating Flash Memory Device Public/Granted day:2009-01-01
Information query
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