Invention Grant
US07674999B2 Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
有权
基于高功率激光二极管的退火系统的准直小透镜的快轴光束轮廓成形
- Patent Title: Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
- Patent Title (中): 基于高功率激光二极管的退火系统的准直小透镜的快轴光束轮廓成形
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Application No.: US11508781Application Date: 2006-08-23
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Publication No.: US07674999B2Publication Date: 2010-03-09
- Inventor: Dean Jennings , Abhilash J. Mayur , Timothy N. Thomas , Vijay Parihar , Vedapuram S. Achutharaman , Randhir P. S. Thakur
- Applicant: Dean Jennings , Abhilash J. Mayur , Timothy N. Thomas , Vijay Parihar , Vedapuram S. Achutharaman , Randhir P. S. Thakur
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/477

Abstract:
A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.
Public/Granted literature
- US20080210671A1 Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system Public/Granted day:2008-09-04
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