Invention Grant
- Patent Title: Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
- Patent Title (中): 处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
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Application No.: US11243581Application Date: 2005-10-05
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Publication No.: US07675068B2Publication Date: 2010-03-09
- Inventor: Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
- Applicant: Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Summa, Additon & Ashe, P.A.
- Main IPC: H01L31/0312
- IPC: H01L31/0312
Abstract:
A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
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