中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07675069B2 InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same 有权
InAlGaN在紫外线短波长区域中发光，其制备方法以及使用其的紫外线发光元件

  • Patent Title: InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same
  • Patent Title (中): InAlGaN在紫外线短波长区域中发光，其制备方法以及使用其的紫外线发光元件
  • Application No.: US09790660
    Application Date: 2001-02-23
  • Publication No.: US07675069B2
    Publication Date: 2010-03-09
  • Inventor: Hideki Hirayama , Yoshinobu Aoyagi
  • Applicant: Hideki Hirayama , Yoshinobu Aoyagi
  • Applicant Address: JP Wako-Shi, Saitama
  • Assignee: Riken
  • Current Assignee: Riken
  • Current Assignee Address: JP Wako-Shi, Saitama
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: JP2000-045318 20000223
  • Main IPC: H01L21/00
  • IPC: H01L21/00
InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same
Abstract:
For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.
Abstract(Chinese):

为了在具有360nm以下的波长的紫外线短波长区域内发光，将其配置在InAlGaN中，使得In的组成比为2％〜20％，Al的组成比为 10％〜90％，In，Al，Ga的组成比为100％。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0