Invention Grant
US07675094B2 Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon
有权
具有由P +或N +掺杂多晶硅形成的传输门的图像传感器像素
- Patent Title: Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon
- Patent Title (中): 具有由P +或N +掺杂多晶硅形成的传输门的图像传感器像素
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Application No.: US11021134Application Date: 2004-12-22
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Publication No.: US07675094B2Publication Date: 2010-03-09
- Inventor: Howard E. Rhodes
- Applicant: Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
An active pixel using a transfer gate that has a polysilicon gate doped with P+ is disclosed. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The transfer gate is doped with a p-type dopant.
Public/Granted literature
- US20060131592A1 Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon Public/Granted day:2006-06-22
Information query
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