Invention Grant
- Patent Title: Image sensor
- Patent Title (中): 图像传感器
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Application No.: US11616773Application Date: 2006-12-27
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Publication No.: US07675102B2Publication Date: 2010-03-09
- Inventor: Sang Sik Kim
- Applicant: Sang Sik Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2005-0131365 20051228
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
Embodiments relate to a method of manufacturing an image sensor. According to embodiments, the method may include preparing a semiconductor substrate formed with a plurality of photodiodes, forming an interlayer dielectric layer on the semiconductor substrate, forming a color filter layer on the interlayer dielectric layer, forming a planar layer on the color filter layer, and forming micro-lenses coated with fat-soluble polymer on the planar layer. Since the micro-lens is uniformly formed due to the fat-soluble polymer coated on the micro-lens, the photo-sensitivity and color reproduction of the image sensor are improved, resulting in the high-quality image sensor.
Public/Granted literature
- US20070148372A1 IMAGE SENSOR Public/Granted day:2007-06-28
Information query
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