Invention Grant
US07675108B2 Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
有权
在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法
- Patent Title: Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
- Patent Title (中): 在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法
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Application No.: US11201874Application Date: 2005-08-11
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Publication No.: US07675108B2Publication Date: 2010-03-09
- Inventor: Hans-Joachim Schulze , Josef Lutz , Franz-Josef Niedernostheide , Ralf Siemieniec
- Applicant: Hans-Joachim Schulze , Josef Lutz , Franz-Josef Niedernostheide , Ralf Siemieniec
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102004039208 20040812
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
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