Invention Grant
- Patent Title: Temperature compensated work function based voltage reference
- Patent Title (中): 基于温度补偿工作功能的电压参考
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Application No.: US12098689Application Date: 2008-04-07
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Publication No.: US07675134B2Publication Date: 2010-03-09
- Inventor: Gregory Dix
- Applicant: Gregory Dix
- Applicant Address: US AZ Chandler
- Assignee: Microchip Technology Incorporated
- Current Assignee: Microchip Technology Incorporated
- Current Assignee Address: US AZ Chandler
- Agency: King & Spalding L.L.P.
- Main IPC: H01L31/058
- IPC: H01L31/058

Abstract:
A temperature compensated voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference. The transistor widths of two P-MOS transistors are adjusted to minimize voltage variation over a temperature range.
Public/Granted literature
- US20090251204A1 Temperature Compensated Work Function Based Voltage Reference Public/Granted day:2009-10-08
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