Invention Grant
- Patent Title: Semiconductor integrated circuit including a power supply, and semiconductor system including a semiconductor integrated circuit
- Patent Title (中): 包括电源的半导体集成电路和包括半导体集成电路的半导体系统
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Application No.: US11447943Application Date: 2006-06-07
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Publication No.: US07675158B2Publication Date: 2010-03-09
- Inventor: Kyu-Hyoun Kim , Chang-Hyun Kim
- Applicant: Kyu-Hyoun Kim , Chang-Hyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0052739 20050618
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/04 ; H01L23/373 ; H01L21/822

Abstract:
Provided are a semiconductor integrated circuit including a power supply, a semiconductor system including the semiconductor integrated circuit, and a method of forming the semiconductor integrated circuit. The semiconductor integrated circuit includes: a semiconductor substrate on a surface of which a plurality of electrical circuits and a plurality of power pads are mounted; an insulation layer stacked on the semiconductor substrate; a first conductive layer connected to a first power pad by a first via and stacked on the insulation layer; a second conductive layer connected to a second power pad by a second via, stacked on the insulation layer, and separated from the first insulation layer; and a power generation layer stacked on the first conductive layer and the second conductive layer and that generates voltage.
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Information query
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