Invention Grant
- Patent Title: High-frequency, high-voltage electron switch
- Patent Title (中): 高频高压电子开关
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Application No.: US11690918Application Date: 2007-04-17
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Publication No.: US07675226B2Publication Date: 2010-03-09
- Inventor: Robert Carl Murray , Karim Younsi , Fengfeng Tao , Seyed Gholamali Saddoughi
- Applicant: Robert Carl Murray , Karim Younsi , Fengfeng Tao , Seyed Gholamali Saddoughi
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Francis T. Coppa
- Main IPC: H01J29/70
- IPC: H01J29/70

Abstract:
A high-frequency, high-voltage electron switch includes an electron source, a steering mechanism, a mask or anode plate, and a target. The electron source produces a beam of electrons with a voltage of at least about 1 kV that impinges upon the anode plate. The steering mechanism scans the electron beam across the anode plate at a scanning frequency of at least about 10 MHz. A hole or aperture is provided in the anode plate that allows the electron beam to pass through and produce a pulsed, high-voltage current in the target with a very high-frequency repetition rate and a very fast rise time. The pulsed, high-voltage current produced in the target can be used to cause a high-voltage source to turn on and off.
Public/Granted literature
- US20080258600A1 High-Frequency, High-Voltage Electron Switch Public/Granted day:2008-10-23
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