Invention Grant
- Patent Title: Wideband low dropout voltage regulator
- Patent Title (中): 宽带低压差稳压器
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Application No.: US11864364Application Date: 2007-09-28
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Publication No.: US07675273B2Publication Date: 2010-03-09
- Inventor: Jin-Su Ko , Sunghyun Park
- Applicant: Jin-Su Ko , Sunghyun Park
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agent Jiayu Xu
- Main IPC: G05F1/59
- IPC: G05F1/59 ; G05F1/575

Abstract:
A method and apparatus for regulating a supply voltage to an integrated circuit is disclosed. The method and apparatus provides good power supply noise rejection characteristics over a wide bandwidth as well as low dropout voltage. In the disclosed methods and apparatus, native NMOS source followers may be stacked and coupled to a supply rail to supply a regulated voltage to a load. The gates of the native NMOS source followers may be coupled to the outputs of internal regulators. The internal regulators may also contain stacked NMOS source followers. In an embodiment, the internal regulators may be supplied by a high voltage source, while native NMOS source followers may be supplied by a low voltage source. In another embodiment, lo-pass filters may filter the signal from the internal regulators to the NMOS source followers. In yet another embodiment, the gates of the source followers may be coupled to the sources of the transistors with the internal regulators.
Public/Granted literature
- US20090085534A1 WIDEBAND LOW DROPOUT VOLTAGE REGULATOR Public/Granted day:2009-04-02
Information query
IPC分类: