Invention Grant
- Patent Title: Semiconductor memory device including on die termination circuit and on die termination method thereof
- Patent Title (中): 半导体存储器件包括管芯端接电路及其管芯端接方法
-
Application No.: US11429365Application Date: 2006-05-05
-
Publication No.: US07675316B2Publication Date: 2010-03-09
- Inventor: Jong-Hyoung Lim , Sang-Seok Kang
- Applicant: Jong-Hyoung Lim , Sang-Seok Kang
- Applicant Address: KR
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2005-071750 20050805
- Main IPC: H03K17/16
- IPC: H03K17/16
Abstract:
A semiconductor memory device is provided. The device includes an on die termination circuit controlling a termination resistance value by detecting a phase change of a signal inputted through a pad. Additionally, the on die termination circuit changes the termination resistance value when an identical phase signal is inputted during n (n is positive integer) periods of a clock signal.
Public/Granted literature
- US20070030025A1 Semiconductor memory device including on die termination circuit and on die termination method thereof Public/Granted day:2007-02-08
Information query
