Invention Grant
- Patent Title: Semiconductor power converter apparatus
- Patent Title (中): 半导体功率转换装置
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Application No.: US11633467Application Date: 2006-12-05
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Publication No.: US07675763B2Publication Date: 2010-03-09
- Inventor: Tatsuya Okuda , Takuya Michinaka
- Applicant: Tatsuya Okuda , Takuya Michinaka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-159665 20060608
- Main IPC: H02M5/42
- IPC: H02M5/42 ; H02M7/04 ; H02M7/68

Abstract:
Even when one of IGBTs fails in a semiconductor power converter apparatus in which a plurality of semiconductor elements are connected in parallel, the remaining IGBT(s) is prevented from failing with a simple circuit configuration. The semiconductor power converter apparatus includes: a semiconductor power conversion circuit in which a first IGBT having a temperature sensing unit and a second IGBT having a current sensing unit are connected in parallel, for causing the first and second semiconductor elements to perform switching operations; an overheat protection circuit for performing overheat protection for the first and second IGBTs based on temperature information obtained from the temperature sensing unit of the first IGBT; and an overcurrent protection circuit for performing overcurrent protection for the first and second IGBTs based on current information obtained from the current sensing unit of the second IGBT.
Public/Granted literature
- US20070284664A1 Semiconductor power converter apparatus Public/Granted day:2007-12-13
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