Invention Grant
US07675788B2 Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor 有权
具有cNAND结构并且单片集成在半导体上的电子非易失性存储器件

  • Patent Title: Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
  • Patent Title (中): 具有cNAND结构并且单片集成在半导体上的电子非易失性存储器件
  • Application No.: US11401521
    Application Date: 2006-04-11
  • Publication No.: US07675788B2
    Publication Date: 2010-03-09
  • Inventor: Giovanni Campardo
  • Applicant: Giovanni Campardo
  • Agency: Trop, Pruner & Hu, P.C.
  • Priority: ITMI2005A0608 20050411
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
Abstract:
A non-volatile electronic memory device may be monolithically integrated on a semiconductor and be of the Flash EEPROM type having a NAND architecture and including at least one memory matrix organized in rows and columns of memory cells. Advantageously, the matrix may include at least one portion having a different data storage capacity and a different access speed than another portion.
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