Invention Grant
US07675788B2 Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
有权
具有cNAND结构并且单片集成在半导体上的电子非易失性存储器件
- Patent Title: Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
- Patent Title (中): 具有cNAND结构并且单片集成在半导体上的电子非易失性存储器件
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Application No.: US11401521Application Date: 2006-04-11
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Publication No.: US07675788B2Publication Date: 2010-03-09
- Inventor: Giovanni Campardo
- Applicant: Giovanni Campardo
- Agency: Trop, Pruner & Hu, P.C.
- Priority: ITMI2005A0608 20050411
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A non-volatile electronic memory device may be monolithically integrated on a semiconductor and be of the Flash EEPROM type having a NAND architecture and including at least one memory matrix organized in rows and columns of memory cells. Advantageously, the matrix may include at least one portion having a different data storage capacity and a different access speed than another portion.
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