Invention Grant
US07675789B2 Programmable heavy-ion sensing device for accelerated DRAM soft error detection
有权
用于加速DRAM软错误检测的可编程重离子感测装置
- Patent Title: Programmable heavy-ion sensing device for accelerated DRAM soft error detection
- Patent Title (中): 用于加速DRAM软错误检测的可编程重离子感测装置
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Application No.: US12134347Application Date: 2008-06-06
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Publication No.: US07675789B2Publication Date: 2010-03-09
- Inventor: Howard H. Chen , John A. Fifield , Louis L. Hsu , Henry H. K. Tang
- Applicant: Howard H. Chen , John A. Fifield , Louis L. Hsu , Henry H. K. Tang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Brian P. Verminski
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.
Public/Granted literature
- US20080266984A1 Programmable Heavy-Ion Sensing Device for Accelerated DRAM Soft Error Detection Public/Granted day:2008-10-30
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