Invention Grant
- Patent Title: Synchronous memory device
- Patent Title (中): 同步存储设备
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Application No.: US12480186Application Date: 2009-06-08
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Publication No.: US07675791B2Publication Date: 2010-03-09
- Inventor: Youn-cheul Kim
- Applicant: Youn-cheul Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0079541 20050829
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A synchronous memory device, which includes a read command buffer, a replica circuit, and a latency circuit. The read command buffer provides a read signal in response to a read command. The replica circuit provides a transfer signal whose time difference with respect to the feedback clock signal is substantially identical to a period that it takes a read command buffer to provide the read signal. The latency circuit receives the read signal, and provides a latency signal having a difference of a predetermined time corresponding to CAS latency with respect to the read signal in response to the transfer signal.
Public/Granted literature
- US20090244998A1 SYNCHRONOUS MEMORY DEVICE Public/Granted day:2009-10-01
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