Invention Grant
US07675792B2 Generating reference currents compensated for process variation in non-volatile memories
有权
生成参考电流补偿了非易失性存储器中的工艺变化
- Patent Title: Generating reference currents compensated for process variation in non-volatile memories
- Patent Title (中): 生成参考电流补偿了非易失性存储器中的工艺变化
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Application No.: US11904071Application Date: 2007-09-26
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Publication No.: US07675792B2Publication Date: 2010-03-09
- Inventor: Ferdinando Bedeschi , Claudio Resta , Enzo Donze
- Applicant: Ferdinando Bedeschi , Claudio Resta , Enzo Donze
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
In a current reference generator device, a voltage reference generator stage generates a reference voltage (Vref) and an active element output stage receives the reference voltage (Vref) and outputs a reference current (Iref) as a function of the reference voltage (Vref). A control stage is operatively coupled to the voltage reference generator stage and to the active element output stage and controls a first trimmable parameter (m) associated to the voltage reference generator stage and a second trimmable parameter associated to the active element output stage, so as to compensate for changes in a value of the reference current (Iref) due to manufacturing process deviations.
Public/Granted literature
- US20090080267A1 Generating reference currents compensated for process variation in non-volatile memories Public/Granted day:2009-03-26
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