Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11634903Application Date: 2006-12-07
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Publication No.: US07675796B2Publication Date: 2010-03-09
- Inventor: Yoshiyuki Kurokawa
- Applicant: Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi,Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi,Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-375564 20051227
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Information stored in a nonvolatile storage device mounted to a semiconductor device is read by inputting an address signal or the like and by using a sense amplifier or the like. At this time, since a prescribed period of time is required, it is necessary to design a semiconductor device taking that delay into consideration. Also, a sense amplifier consumes an enormous amount of current. Further, since the number of reading bits is set, it is also necessary to read other unnecessary information when only 1 bit is to be read. A nonvolatile storage circuit is formed by a memory element that is formed by an electrical element having an electrically conducting or insulating means, a reset element, and a latch element. In the storage element, different information is stored in the latch element depending on whether the electrical element is electrically insulated or conductive, when the wireless chip is reset. With such a structure, a low power consumption wireless chip mounted with a nonvolatile storage device can be provided a low cost.
Public/Granted literature
- US20070147151A1 Semiconductor device Public/Granted day:2007-06-28
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